Si Deep Reactive Ion Etching Systems
Samco was the first of Japan's semiconductor process equipment manufacturers to obtain a Bosch Process license. Using our latest patented Tornado ICP� technology and harnessing the Bosch Process, Samco's Si DRIE systems have proven effective in deep, vertical, high-speed Si deep etching for both R&D and production.
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硅深刻蚀设备 RIE-802BCT
拥有2个反应腔体的生产用途设备
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硅深刻蚀设备 RIE-800BCT
世界最高等级的生产用途设备,可搭载两个晶片匣
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硅深刻蚀设备 RIE-800iPB
最大可对应φ8"晶片,搭载晶片搬运腔体
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硅深刻蚀设备 RIE-400iPB
最大可对应φ4"晶片的研发用途设备
Key Features and Benefits
- Benefits of Samco Si DRIE systems:
- Industry leading etch rates of over 50 ?m/min
- High selectivity of over 250:1 (Si:Photoresist)
- Uniformity of �5% or better (4, 6, and 8" wafers)
- High aspect ratio (greater than 40:1)
- Low scalloping, smooth sidewall profile (less than 0.1 ?m scallops)
- Patented, dual frequency SOI anti-notch etching technology
- Unique "anti-tilt" feature that ensures high uniformity
- Electrostatic chuck and helium backside cooling (for wafer temperature control)
- ICP source can be modified for DRIE of SiO2