原子层沉积设备
原子层沉积(ALD)是一种在原子尺度上沉积薄膜的技术，它利用样品表面与前驱体之间的化学反应进行顺序脉冲。与传统的PECVD技术相比，可以在沟槽和孔结构上实现高宽比的保形薄膜涂层。
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等离子体增强原子层沉积设备 AD-230LP
适合电子元器件用途的绝缘膜沉积的ALD设备
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等离子体增强原子层沉积设备 AL-1
可于原子层水平控制薄膜厚度
Plasma Enhanced CVD Systems
Plasma Enhanced Chemical Vapor Deposition (PECVD) is a technology to form a thin film by generating active radicals and ions on a target substrate by turning a reactive gas into a plasma state and causing a chemical reaction on the target substrate to be deposited. It is used to deposit silicon nitride film (SiN) as a passivation film and silicon oxide film (SiO?) as an interlayer insulating film in the manufacturing process of compound semiconductors and silicon semiconductors.
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等离子体增强化学气相沉积设备 PD-2201LC
生产用途设备
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等离子体增强化学气相沉积设备 PD-220NL
紧凑型设计，具有晶片搬运腔体，适合研发用途
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等离子体增强化学气相沉积设备 PD-3800L
多片晶片处理
Liquid Source CVD™ Systems
Samco's unique Liquid Source CVD� system uses self-bias deposition techniques and a liquid TEOS source to deposit SiO2 films with low stress, from thin films to extremely thick films (up to 100 �m).
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液态源化学气相沉积设备 PD-270STLC
具有晶片装卸腔和搬运腔的沉积设备
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Liquid Source CVD System PD-330STC
Processing up to �300 mm
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Liquid Source CVD System PD-100ST
Open-load system for R&D
