原子层沉积设备

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原子层沉积(ALD)是一种在原子尺度上沉积薄膜的技术,它利用样品表面与前驱体之间的化学反应进行顺序脉冲。与传统的PECVD技术相比,可以在沟槽和孔结构上实现高宽比的保形薄膜涂层。

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Plasma Enhanced CVD Systems

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Plasma Enhanced Chemical Vapor Deposition (PECVD) is a technology to form a thin film by generating active radicals and ions on a target substrate by turning a reactive gas into a plasma state and causing a chemical reaction on the target substrate to be deposited. It is used to deposit silicon nitride film (SiN) as a passivation film and silicon oxide film (SiO?) as an interlayer insulating film in the manufacturing process of compound semiconductors and silicon semiconductors.

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Liquid Source CVD™ Systems

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Samco's unique Liquid Source CVD� system uses self-bias deposition techniques and a liquid TEOS source to deposit SiO2 films with low stress, from thin films to extremely thick films (up to 100 �m).

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