The anisotropic and small footing ridge shape with a width of 1.8 ?m and a depth of 2.5 ?m has been achieved. The etching rate of 350 nm/min was obtained with almost no sidewall deposits. The mask is SiO?.
ProcessesRidge formation of InP lasers
The anisotropic and small footing ridge shape with a width of 1.8 ?m and a depth of 2.5 ?m has been achieved. The etching rate of 350 nm/min was obtained with almost no sidewall deposits. The mask is SiO?.